FDB12N50U Rev.C0

www.fairchildsemi.com

2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDB12N50U

FDB12N50UTM_WS

D2-PAK

330mm

24mm

800

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

500

-

-

V

Breakdown Voltage Temperature

Coefficient

0.7

-

Zero Gate Voltage Drain Current

-

-

25

μA

-

-

250

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-

0.65

0.8

Ω

Forward Transconductance

(Note 4)

-11

-

S

Input Capacitance

f = 1MHz

-

1050

1395

pF

Output Capacitance

-

140

190

pF

Reverse Transfer Capacitance

-

11

17

pF

Total Gate Charge at 10V

(Note 4, 5)

-21

30

nC

Gate to Source Gate Charge

-

6

-

nC

Gate to Drain “Miller” Charge

-

9

-

nC

Turn-On Delay Time

(Note 4, 5)

-35

80

ns

Turn-On Rise Time

-

45

100

ns

Turn-Off Delay Time

-

60

130

ns

Turn-Off Fall Time

-

35

80

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

10

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

40

A

Drain to Source Diode Forward Voltage

-

-

1.6

V

Reverse Recovery Time

(Note 4)

-60

-

ns

Reverse Recovery Charge

-

0.1

-

μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics