FDD7N60NZ_10 datasheet(3/9 Pages) FAIRCHILD

Part #	FDD7N60NZ

Description	N-Channel MOSFET 600V, 5.5A, 1.25?

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDD7N60NZ / FDU7N60NZ Rev. A

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

68

0.1

1

10

20

-55

o

C

150

o

C

*Notes:

1. VDS = 20V

2. 250s Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0.1

1

10

30

0.1

1

10

20

*Notes:

1. 250s Pulse Test

2. TC = 25

o

C

VDS, Drain-Source Voltage[V]

VGS = 15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

0.0

0.5

1.0

1.5

0.1

1

10

100

*Notes:

1. V

GS = 0V

2. 250s Pulse Test

150

o

C

V

SD

, Body Diode Forward Voltage [V]

25

o

C

03

69

12

0.5

1.0

1.5

2.0

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

10

-1

110

30

0

200

400

600

800

1000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

036

9

12

15

0

2

4

6

8

10

*Note: ID = 5.5A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

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