Electronic Components Datasheet Search |
|
FDD6685 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
|
FDD6685 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page FDD6685 Rev D1 Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) ID = -11.0 A VDS = 10V 20V 30V 0 600 1200 1800 2400 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 1000 0.01 0.10 1.00 10.00 100.00 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 96 oC/W TA = 25 oC 10ms 1ms 100µs 10s 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 96°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) RqJA(t) = r(t) * RqJA RqJA = 96 °C/W T J - TA = P * R qJA(t) Duty Cycle, D = t 1 / t2 P(pk) t 1 t 2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 |
Similar Part No. - FDD6685_11 |
|
Similar Description - FDD6685_11 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |