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FDMC7208S Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FDMC7208S
Description  Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 12 A, 9.0 m廓 Q2: 30 V, 16 A, 6.4 m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDMC7208S Datasheet(HTML) 1 Page - Fairchild Semiconductor

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August 2012
©2012 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDMC7208S Rev.C2
FDMC7208S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 12 A, 9.0 m
Ω Q2: 30 V, 16 A, 6.4 mΩ
Features
Q1: N-Channel
Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 6.4 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.5 A
Termination is Lead-free and RoHS Compliant
General Description
This device includes two 30V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is en-
hanced for exceptional thermal performance.
Applications
Computing
Communications
General Purpose Point of Load
Notebook System
D1
D2
S1
G1
S2
G2
Power 33
Pin 1
S1
S1
S2
S2
MOSFET Maximum Ratings T
A = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Q1
Q2
Units
VDS
Drain to Source Voltage
30
30
V
VGS
Gate to Source Voltage
(Note 4)
±20
±12
V
ID
Drain Current
-Continuous (Package limited)
TC = 25 °C
22
26
A
-Continuous
TA = 25 °C
121a
161b
-Pulsed
60
80
EAS
Single Pulse Avalanche Energy
(Note 3)
21
21
mJ
PD
Power Dissipation for Single Operation
TA = 25 °C
1.91a
1.91b
W
Power Dissipation for Single Operation
TA = 25 °C
0.81c
0.81d
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJA
Thermal Resistance, Junction to Ambient
651a
651b
°C/W
RθJA
Thermal Resistance, Junction to Ambient
1551c
1551d
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDMC7208S
FDMC7208S
Power 33
13 ”
12 mm
3000 units


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