©2011 Fairchild Semiconductor Corporation

FDME510PZT Rev.C1

www.fairchildsemi.com

2

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

-20

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

-13

mV/°C

Zero Gate Voltage Drain Current

-1

μA

Gate to Source Leakage Current

±10

μA

Gate to Source Threshold Voltage

-0.4

-0.5

-1.0

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

3

mV/°C

Drain to Source On Resistance

31

37

m

Ω

38

50

48

65

57

100

40

60

Forward Transconductance

21

S

Input Capacitance

f = 1 MHz

1120

1490

pF

Output Capacitance

155

210

pF

Reverse Transfer Capacitance

140

210

pF

Turn-On Delay Time

6.5

13

ns

Rise Time

10

16

ns

Turn-Off Delay Time

93

149

ns

Fall Time

54

86

ns

Total Gate Charge

16

22

nC

Gate to Source Gate Charge

1.6

nC

Gate to Drain “Miller” Charge

4

nC

Source to Drain Diode Forward Voltage

(Note 2)

-0.6

-1.2

V

Reverse Recovery Time

38

61

ns

Reverse Recovery Charge

16

29

nC

Notes:

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

a. 60 °C/W when mounted on

b. 175 °C/W when mounted on a

minimum pad of 2 oz copper.