FDMS8570S datasheet(6/8 Pages) FAIRCHILD

Part #	FDMS8570S

Description	N-Channel PowerTrench짰 SyncFETTM 25 V, 60 A, 2.8 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMS8570S Rev.D1

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6

SyncFETTM Schottky body diode

Characteristics

Fairchild’s SyncFETTM process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibits similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverse recovery

characteristic of the FDMS8570S.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

0

50

100

150

200

250

-5

0

5

10

15

20

25

30

di/dt = 300 A/μs

TIME (ns)

0

5

10

15

20

25

10

-6

10

-5

10

-4

10

-3

10

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

V

DS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

Figure 14. FDMS8570S SyncFETTM body

diode reverse recovery characteristic

Figure 15. SyncFETTM body diode reverse

leakage versus drain-source voltage

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FDMS8570S Datasheet(PDF) 6 Page - Fairchild Semiconductor

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