FDMS8622 datasheet(4/7 Pages) FAIRCHILD

Part #	FDMS8622

Description	N-Channel Power Trench짰 MOSFET 100 V, 16.5 A, 56 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMS8622 Rev.C

Figure 7.

02

46

0

2

4

6

8

10

ID = 4.8 A

VDD = 75 V

VDD = 25 V

Qg, GATE CHARGE (nC)

VDD = 50 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

1

10

100

500

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

1

2

4

6

8

10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

1

2

3

4

5

VGS = 6 V

RθJA = 50

o

C/W

VGS = 10 V

T

A

, AMBIENT TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Ambient Temperature

Figure 11. Forward Bias Safe

Operating Area

0.01

0.1

1

10

100

500

0.01

0.1

1

10

100

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

oC/W

TA = 25

oC

Figure 12.

10

-3

10

-2

10

-1

110

100

1000

0.1

1

10

100

1000

SINGLE PULSE

RθJA = 125

oC/W

TA = 25

oC

t, PULSE WIDTH (sec)

Single Pulse Maximum

Power Dissipation

Typical Characteristics T

J = 25 °C unless otherwise noted

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