FDMS86520L datasheet(1/7 Pages) FAIRCHILD

Part #	FDMS86520L

Description	N-Channel PowerTrench짰 MOSFET 60 V, 22 A, 8.2 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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April 2011

FDMS86520L Rev.C

www.fairchildsemi.com

1

FDMS86520L

N-Channel PowerTrench® MOSFET

60 V, 22 A, 8.2 m

Ω

Features

Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A

Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A

Advanced package and silicon combination for low rDS(on) and

high efficiency

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low rDS(on), fast switching speed and body

diode reverse recovery performance.

Applications

Primary Switch in isolated DC-DC

Synchronous Rectifier

Load Switch

Power 56

D

G

S

Pin 1

Bottom

Top

G

S

D

5

6

7

8

3

2

1

4

MOSFET Maximum Ratings T

A = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

60

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current -Continuous (Package limited)

TC = 25 °C

22

A

-Continuous (Silicon limited)

TC = 25 °C

71

-Continuous

TA = 25 °C

(Note 1a)

13.5

-Pulsed

60

EAS

Single Pulse Avalanche Energy

(Note 3)

91

mJ

PD

Power Dissipation

TC = 25 °C

69

W

Power Dissipation

TA = 25 °C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

1.8

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS86520L

Power 56

13 ’’

12 mm

3000 units

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