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FQU19N10 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQU19N10 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Rev. A1, January 2009 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2009 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.8 A -- 0.078 0.1 Ω gFS Forward Transconductance VDS = 40 V, ID = 7.8 A -- 11 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 600 780 pF Coss Output Capacitance -- 165 215 pF Crss Reverse Transfer Capacitance -- 32 40 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 19 A, RG = 25 Ω -- 7.5 25 ns tr Turn-On Rise Time -- 150 310 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 80 V, ID = 19 A, VGS = 10 V -- 19 25 nC Qgs Gate-Source Charge -- 3.9 -- nC Qgd Gate-Drain Charge -- 9.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 62.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 19 A, dIF / dt = 100 A/µs -- 78 -- ns Qrr Reverse Recovery Charge -- 200 -- nC |
Similar Part No. - FQU19N10_09 |
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Similar Description - FQU19N10_09 |
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