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SGM2016AN Datasheet(PDF) 2 Page - Sony Corporation |
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SGM2016AN Datasheet(HTML) 2 Page - Sony Corporation |
2 / 5 page – 2 – SGM2016AN 0 2 4 6 0 10 20 30 40 VDS – Drain to source voltage [V] ID vs. VDS VG1S = 0V –0.6V –0.3V –0.9V (VG2S = 1.5V) 1 3 5 –2.0 –1.5 –1.0 –0.5 0 0 10 15 20 25 VG1S – Gate 1 to source voltage [V] ID vs. VG1S (VDS = 5V) 1.0V 0.5V 0V –0.5V 5 –1.0V VG2S = 1.5V Typical Characteristics (Ta = 25°C) Electrical Characteristics (Ta = 25°C) Item Drain cut-off current Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Forward transfer admittance Input capacitance Feedback capacitance Noise figure NF associated gain IDSX IG1SS IG2SS IDSS VG1S (OFF) VG2S (OFF) gm Ciss Crss NF Ga VDS = 12V VG1S = –4V VG2S = 0V VG1S = –4.5V VG2S = 0V VDS = 0V VG2S = –4.5V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10mA VG2S = 1.5V f = 1kHz VDS = 5V ID = 10mA VG2S = 1.5V f = 1MHz VDS = 5V ID = 10mA VG2S = 1.5V f = 900MHz 10 20 17 30 0.9 25 1.2 21 50 –8 –8 35 –2.5 –2.5 2.0 40 2.0 µA µA µA mA V V ms pF fF dB dB Symbol Conditions Min. Typ. Max. Unit |
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