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IRFSL7437PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRFSL7437PBF
Description  HEXFETPower MOSFET
Download  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFSL7437PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFS/SL7437PbF
2
www.irf.com
September 06, 2012
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 25Ω, IAS = 100A, VGS =10V.
„ ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C.
‰ This value determined from sample failure population,
starting TJ = 25°C, L=0.095mH, RG = 25
Ω, IAS = 100A, VGS =10V
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.029 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.8
–––
2.0
–––
VGS(th)
Gate Threshold Voltage
2.2
3.0
3.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
2.2
–––
Ω
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mAd
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
k
IAR
Avalanche Current
Ãd
A
EAR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.65
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
Max.
250
™
180
1000
195
°C/W
A
°C
300
350
See Fig. 14, 15, 22a, 22b
230
3.0
500
-55 to + 175
± 20
1.5
10lbf
x in (1.1Nx m)


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