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IRFSL7437PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFSL7437PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IRFS/SL7437PbF 2 www.irf.com September 06, 2012 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.069mH RG = 25Ω, IAS = 100A, VGS =10V. ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L=0.095mH, RG = 25 Ω, IAS = 100A, VGS =10V Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.4 1.8 ––– 2.0 ––– VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.2 ––– Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mAd VGS = 10V, ID = 100A VGS = 6.0V, ID = 50A VDS = VGS, ID = 150μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (tested) Single Pulse Avalanche Energy Tested Value k IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.65 RθJA Junction-to-Ambient (PCB Mount) , D2Pak j ––– 40 Max. 250 180 1000 195 °C/W A °C 300 350 See Fig. 14, 15, 22a, 22b 230 3.0 500 -55 to + 175 ± 20 1.5 10lbf x in (1.1Nx m) |
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