BD684A datasheet(2/3 Pages) COMSET

Part #	BD684A

Description	SILICON DARLINGTON POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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PNP BD684 – BD684A

23/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE=0, VCB= -120 V

-

-0,2

mA

IE=0, VCB= -120V, Tj= 150°C

-

-2

ICEO

Collector cut-off current

IB=0,VCE= -1/2VCEOMAX

-

-0,5

mA

IEBO

Emitter cut-offcurrent

IC=0, VEB=-5 V

-

-5

mA

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-1.5 A

IB=-30 mA

BD683

-

-2,5

V

IC=-2 A, IB=-40 mA

BD683A

-

-2,8

hFE

DC Current Gain (*)

VCE=-3 V, IC=-1.5 A

BD683

750

-

VCE=-3 V, IC=-2 A

BD683A

VBE

Base-Emitter Voltage (*)

VCE=-3 V, IC=-1.5 A

BD683

-

-2,5

V

VCE=-3 V, IC=-2 A

BD683A

hfe

Small signal current gain

VCE=-3 V, IC=-1.5 A, f= 1 MHz

10

-

fhfe

Ut-off frequency

VCE=-3 V, IC=-1.5 A

-

60

-

kHz

VF

Diode forward voltage

IF=-1,5 A

-

-1,5

-

V

I(SB)

Second-breakdown

collector current

VCE=-50 V, tP= 20ms, non rep.

without heatsink

-0,8

-

A

ton

Turn-on time

Icon= -1.5A, Ibon= -Iboff= -6mA

VCC=-30V

-

0,8

2

µs

toff

Turn-off time

-

4,5

8

(*) Measured under pulse conditions :tP <300µs, δ <2%.

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