BD896 datasheet(3/4 Pages) COMSET

Part #	BD896

Description	SILICON DARLINGTON POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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3 / 4 page

BD896 – BD898 – BD900 – BD902

25/09/2012

COMSET SEMICONDUCTORS

3 | 4

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Min

Typ

Max

Unit

VBE(on)

Base-Emitter Voltage

(*)

IC= -3 A, VCE= -3 V

BD896

-

-2.5

V

BD898

BD900

BD902

hFE

DC Current Gain (*)

VCE= -3.0 V

IC= -3 A

BD896

750

-

BD898

BD900

BD902

VECF

C-E Diode Forward

Voltage

IE= -8 A

BD896

-

-3.5

V

BD898

BD900

BD902

SWITCHING TIMES

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ton

turn-on time

IC= -3 A, VBE(off) = 3.5 V

IBon = -IBoff = -12 mA, RL = 10 Ω

-

1

-

µs

toff

turn-off time

-

5

-

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance Junction To Case

1.79

°C/W

RthJ-A

Thermal Resistance Junction To Free Air

62.5

°C/W

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