BDV65B datasheet(3/4 Pages) COMSET

Part #	BDV65B

Description	NNP SILICON DARLINGTONS POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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3 / 4 page

BDV65-A-B-C

26/09/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Mx

Unit

ICEO

Collector Cutoff

Current

VCE= 30 V, IB= 0

BDV65

-

2

mA

VCE= 40 V, IB= 0

BDV65A

VCE= 50 V, IB= 0

BDV65B

VCE= 60 V, IB= 0

BDV65C

IEBO

Emitter Cutoff Current

VBE= 5 V, IC= 0

BDV65

-

5

mA

BDV65A

BDV65B

BDV65C

ICBO

Collector Cutoff

Current

IE= 0

Tj=25°C

VCB= 60 V

BDV65

-

0.4

mA

VCB= 80 V

BDV65A

VCB= 100 V

BDV65B

VCB= 120 V

BDV65C

IE= 0

Tj=150°C

VCB= 30 V

BDV65

-

2

VCB= 40 V

BDV65A

VCB= 50 V

BDV65B

VCB= 60 V

BDV65C

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= 30 mA, IB = 0

BDV65

60

-

V

BDV65A

80

-

BDV65B

100

-

BDV65C

120

-

hFE

DC Current Gain (*)

VCE= 4 V, IC= 5 A

BDV65

1000

-

BDV65A

BDV65B

BDV65C

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 5 A, IB= 20 mA

BDV65

-

2

V

BDV65A

BDV65B

BDV65C

VBE

Base-Emitter

Voltage(*)

VCE= 4 V, IC= 5 A

BDV65

-

2,5

V

BDV65A

BDV65B

BDV65C

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 1.5 %

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