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TIC108D Datasheet(PDF) 1 Page - Comset Semiconductor |
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TIC108D Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S 02/10/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 5 A Continuous On-State Current • 20 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 1 mA • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit A B C D E M S N VDRM Repetitive peak off-state voltage (see Note1) 100 200 300 400 500 600 700 800 V VRRM Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 V IT(RMS) Continuous on-state current at (or below) 80°C case temperature ( see note2) 5 A IT(AV) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) 3.2 A ITM Surge on-state current (see Note4) 20 A IGM Peak positive gate current (pulse width ≤300 µs) 0.2 A PGM Peak power dissipation (pulse width ≤300 µs) 1.3 W PG(AV) Average gate power dissipation (see Note5) 0.3 W TC Operating case temperature range -40 to +110 °C Tstg Storage temperature range -40 to +125 °C TL Lead temperature 1.6 mm from case for 10 seconds 230 °C |
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