TIC108N datasheet(2/4 Pages) COMSET

Part #	TIC108N

Description	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,

TIC108N, TIC108S

02/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

tgt

Gate-controlled

Turn-on time

VAA = 30 V, RL = 6 Ω

RGK(eff) = 5 kΩ, Vin = 50 V

2.9

µs

tq

Circuit-communicated

Turn-off time

VAA = 30 V, RL = 6 Ω

IRM ≈ 8 A

13.3

R∂JC

Junction to case thermal resistance

≤ 3.5

°C/W

R∂JA

Junction to free air thermal resistance

≤ 62.5

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak off-state

current

VD = Rated VDRM

RGK = 1 kΩ, TC = 110°C

-

400

µA

IRRM

Repetitive peak reverse

current

VR = Rated VRRM, IG = 0

TC = 110°C

-

1

mA

IGT

Gate trigger current

VAA = 6 V, RL = 100 Ω

tp(g) ≥ 20µs

0.2

-

200

µA

VGT

Gate trigger voltage

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = -40°C

-

1.2

V

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

0.4

0.6

1

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = 110°C

0.2

-

IH

Holding current

VAA = 6 V, RGK = 1 kΩ

initiating IT = 20 mA

-

10

mA

VAA = 6 V, RGK = 1 kΩ

initiating IT = 20 mA

TC = -40°C

-

15

VTM

Peak on-state voltage

ITM = 5A (see Note6)

-

1.7

V

dv/dt

Critical rate of rise of off-state

voltage

VD = Rated VD, RGK = 1 kΩ

TC = 110°C

-

80

-

V/µs

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