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EK64101-11 Datasheet(PDF) 2 Page - Peregrine Semiconductor Corp. |
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EK64101-11 Datasheet(HTML) 2 Page - Peregrine Semiconductor Corp. |
2 / 13 page Product Specification PE64101 Page 2 of 13 ©2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0378-01 │ UltraCMOS® RFIC Solutions Table 1. Electrical Specifications @ 25°C, VDD = 2.8V Parameter Configuration Condition Min Typ Max Units Operating Frequency Range 7 Both 100 3000 MHz Minimum Capacitance Shunt 6 State = 00000, 100 MHz (RF+ to Grounded RF-) -10% 1.38 +10% pF Maximum Capacitance Shunt 6 State = 11111, 100 MHz (RF+ to Grounded RF-) -10% 5.90 +10% pF Tuning Ratio Shunt 6 Cmax/Cmin, 100 MHz 4.3:1 Step Size Shunt 6 5 bits (32 states), constant step size (100 MHz) 0.146 pF Quality Factor (Cmin) 1 Shunt 6 470 - 582 MHz with Ls removed 698 - 960 MHz, with Ls removed 1710 - 2170 MHz, with Ls removed 50 50 30 Quality Factor (Cmax) 1 Shunt 6 470 - 582 MHz with Ls removed 698 - 960 MHz, with Ls removed 1710 - 2170 MHz, with Ls removed 50 25 10 Self Resonant Frequency Shunt 7 State 00000 State 11111 5.5 2.5 GHz Harmonics (2fo and 3fo) 4 Shunt 6 470 to 582 MHz, Pin +26 dBm, 50Ω 698 to 915 MHz, Pin +26 dBm, 50Ω 1710 to 1910 MHz, Pin +26 dBm, 50Ω -36 -36 -36 dBm dBm dBm Series 5 470 to 582 MHz, Pin +20 dBm, 50Ω 698 to 915 MHz, Pin +20 dBm, 50Ω 1710 to 1910 MHz, Pin +20 dBm, 50Ω -36 -36 -36 dBm dBm dBm 3rd Order Intercept Point Shunt 6 IIP3 = (Pblocker + 2*Ptx - [IMD3]) / 2, where IMD3 = -95 dBm, Ptx = +20 dBm and Pblocker = -15 dBm 60 dBm Switching Time 2, 3 Shunt 6 State change to 10/90% delta capacitance between any two states 2 10 µs Start-up Time 2 Shunt 6 Time from VDD within specification to all performances within specification 5 20 µs Wake-up Time 2, 3 Shunt 6 State change from standby mode to RF state to all performances within specification 5 20 µs Note: 1. Q for a Shunt DTC based on a Series RLC equivalent circuit Q = XC / R = (X-XL)/R, where X = XL + XC , XL = 2*pi*f*L, XC = -1 / (2*pi*f*C), which is equal to removing the effect of parasitic inductance LS 2. DC path to ground at RF+ and RF– must be provided to achieve specified performance 3. State change activated on falling edge of SEN following data word 4. Between 50Ω ports in series or shunt configuration using a pulsed RF input with 4620 vs period, 50% duty cycle, measured per 3GPPTS45.005 5. In series configuration the greater RF power or higher RF voltage should be applied to RF+ 6. RF - should be connected to ground 7. DTC operation above SRF is possible |
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