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UM3003 Datasheet(PDF) 2 Page - Unitpower Technology Limited |
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UM3003 Datasheet(HTML) 2 Page - Unitpower Technology Limited |
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2 / 4 page  2 P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-6A --- 16 20 m Ω VGS=-4.5V , ID=-4A --- 25 32 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-6A --- 12.6 17.6 nC Qgs Gate-Source Charge --- 4.8 6.7 Qgd Gate-Drain Charge --- 4.8 6.7 Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-6A --- 4.6 9.2 ns Tr Rise Time --- 14.8 26.6 Td(off) Turn-Off Delay Time --- 41 82 Tf Fall Time --- 19.6 39.2 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1345 1883 pF Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 158 221 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0.1mH , IAS=-20A 49 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- -7.5 A ISM Pulsed Source Current 2,6 --- --- -50 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-6A , dI/dt=100A/µs , TJ=25℃ --- 16.3 --- nS Qrr Reverse Recovery Charge --- 5.9 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UM3003 |
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