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ENA1126A Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA1126A Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page FH105A No. A1126-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 μA DC Current Gain hFE VCE=5V, IC=10mA 90 200 DC Current Gain Ratio hFE(small/large) VCE=5V, IC=10mA 0.7 0.95 Base-to-Emitter Voltage Diffrence VBE(large-small) VCE=5V, IC=10mA 1.0 mV Gain-Bandwidth Product fT VCE=5V, IC=10mA 5 8 GHz Output Capacitance Cob VCB=10V, f=1MHz 0.45 0.7 pF Forward Transfer Gain ⏐S21e⏐ 2 VCE=5V, IC=10mA, f=1.5GHz 8 10 dB Noise Figure NF VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Ordering Information Device Package Shipping memo FH105A-TR-E MCP6 3,000pcs./reel Pb Free Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA f T -- IC 3 2 100 7 5 5 3 2 10 7 5 0.1 1.0 10 23 5 7 100 2 3 57 2 3 57 VCE=5V IT00322 IT14098 1.0 23 3 57 10 5 2 7 5 1.0 3 2 10 2 VCE =5V VCE =1V |
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