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T1G6000528-Q3 Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # T1G6000528-Q3
Description  7W, 28V, DC ??6 GHz, GaN RF Power Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

T1G6000528-Q3 Datasheet(HTML) 1 Page - TriQuint Semiconductor

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T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Available Package
Applications
• Widebandandnarrowbanddefenseand
commercial communication systems
General Purpose RF Power
Jammers
Radar
Professionalradiosystems
WiMAX
Widebandamplifiers
Test instrumentation
Cellularinfrastructure
Product Features
• Frequency:DCto6GHz
• LinearGain:>10dBat6GHz
• OperatingVoltage:28V
• OutputPower(P
3dB):>7Wat6GHz
• Lead-freeandRoHScompliant
• Lowthermalresistancepackage
General Description
TheTriQuintT1G6000528-Q3isa7W(P
3dB) discrete
GaNonSiCHEMTwhichoperatesfromDCto6GHz
and typically provides >10 dB gain at 6 GHz.The
device is constructed with TriQuint’s proven 0.25
µm production process, which features advanced
fieldplatetechniquestooptimizepowerandeffi-
ciency at high drain bias operating conditions. This
optimizationcanpotentiallylowersystemcostsin
termsoffeweramplifierline-upsandlowerthermal
management costs.
Package Information
Package Type
Description
Base
Q3
5.0mmx4.0mmceramicair
cavitystraightleadpackage
CuMo
Ordering Information
Material No.
Part No.
Description
ECCN
1075579
T1G6000528-Q3
Packagedpart
EAR99
1081733
T1G6000528-Q3-
EVB3
Narrowband
3.0to3.5GHz
evaluation
board
EAR99


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