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TQP3M6004 Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # TQP3M6004
Description  Low Band Dual LNA (700-915 MHz)
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

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TQP3M6004
Datasheet
Low Band Dual LNA (700-915 MHz)
Features
• 0.32 dB Noise Figure
• 20.7 dB Gain
• 12.5 dBm IIP3
• 20 dBm P1dB
• 4 x 4 mm package
• RoHS compliant, Pb-free
Applications
• Base Station receivers
• Tower-mounted amplifiers
Package Style
16-lead QFN 4 x 4 mm
0950
5555
6004
Functional Block Diagram
A
B
RF
inA
V
gateA
RF
inB
V
gateB
Ground and
Source
A, SourceB
connections through
package paddle
RF
outA
V
drainA
RF
outB
V
drainB
A
A
B
B
RF
inA
V
gateA
RF
inB
V
gateB
Ground and
Source
A, SourceB
connections through
package paddle
RF
outA
V
drainA
RF
outB
V
drainB
Ground and source
connections may be
through the paddle
or package pins
Product Description
The TriQuint TQP3M6004 is a packaged low noise dual pHEMT discrete
device operating from 700 - 915 MHz. This broadband device is useful in a
number of different applications, and is particularly well suited for cellular or
WiMAX base station or tower-mounted amplifier products.
TQP3M6004 consists of a single monolithic GaAs die mounted in a small
4 x 4 QFN package.
This device is a discrete dual LNA device is intended to be used as a
balanced pair in wireless networks applications.
Electrical Characteristics
1
Parameter
Typ
Units
Gain
20.7
dB
Saturated Output Power
20.7
dBm
Noise Figure
0.32
dB
Input IP3
12.5
dBm
Drain Current
70
mA
Note 1: Test Conditions: Vd = 4 V, Freq. = 830 MHz, Id = 70 mA per channel, TA = 25 ˚C.
Content will be added or may be revised.
For additional information and latest specifications, see our website: www.triquint.com
May 2010 – Rev B
1


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