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IS43DR86400 Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS43DR86400
Description  512Mb (x8, x16) DDR2 SDRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43DR86400 Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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IS43DR86400, IS43/46DR16320  
Integrated Silicon Solution, Inc. – www.issi.com –
10
Clock Enable (CKE) Truth Table 
Previous Cycle
(1)(N‐1)
Current Cycle
(1)(N)
L
L
X
Maintain Power‐Down
11, 13, 15
LH
Deselect or NOP
Power Down Exit
4, 8, 11, 13
L
L
X
Maintain Self‐Refresh
11, 15, 16
LH
Deselect or NOP
Self‐Refresh Exit
4, 5, 9, 16
Bank(s) Active
H
L
Deselect or NOP
Active Power Down Entry
4, 8, 10, 11, 13
HL
Deselect or NOP
Precharge Power Down Entry
4, 8, 10, 11, 13
H
L
Refresh
Self‐Refresh Entry
6, 9, 11, 13
HH
7
Refer to the Command Truth Table
Notes
Power Down
Self Refresh
All Banks Idle
Current State
(2)
CKE
Command (N)
(3)
RAS#, CAS#, WE#, CS#
Action (N)
(3)
Notes: 
1.
CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge. 
2.
Current state is the state of the DDR2 SDRAM immediately prior to clock edge N. 
3.
COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N). 
4.
All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 
5.
On Self Refresh Exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may be issued only 
after tXSRD (200 clocks) is satisfied. 
6.
Self Refresh mode can only be entered from the All Banks Idle state. 
7.
Must be a legal command as defined in the Command Truth Table. 
8.
Valid commands for Power Down Entry and Exit are NOP and DESELECT only. 
9.
Valid commands for Self Refresh Exit are NOP and DESELECT only. 
10. Power  Down  and  Self  Refresh  cannot  be  entered  while  Read  or  Write  operations,  (Extended)  Mode  Register  Set  operations  or  Precharge  operations  are  in 
progress. 
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to 
achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH. 
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. 
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh requirements outlined in this 
datasheet. 
14. CKE must be maintained HIGH while the DDRII SDRAM is in OCD calibration mode. 
15. “X” means “Don’t Care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven HIGH or LOW in Power Down if the ODT 
function is enabled (Bit A2 or A6 set to “1” in EMR[1]). 
16. VREF must be maintained during Self Refresh operation. 
Data Mask (DM) Truth Table 
Name (Functional)
DM
DQs
Note
Write Enable
L
Valid
1
Write Inhibit
H
X1
Note:  
1.
Used to mask write data, provided coincident with the corresponding data. 
Rev. 00A, 11/17/2009


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