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LA7161BV Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. LA7161BV
Description  VHF Band RF Modulator (US3, 4ch, JPN1, 2ch, TWN13ch compatible)
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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LA7161BM/BV
No.A0006-2/8
Electrical Characteristics/Operating Characteristics at Ta = 25
°C, VCC = 5.0V, Measured with US3ch unless
otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Current drain 1
ICC1
No signal, pin 6 high
26
37
48
mA
Current drain 2
ICC2
No signal, pin 6 low
17
25
33
mA
Regulator voltage
Vreg
No signal
3.7
3.9
4.1
V
Antenna driver voltage
Vanton
Pin 6 high, 220
Ω load
3.2
3.5
3.8
V
RF type
Video carrier output US
Pus
No signal (Note 1)
85
87
89
dB
μ
Video carrier output JP
Pjp
No signal (Note 1)
84.5
86.5
88.5
dB
μ
Video carrier output TW
Ptwn
No signal (Note 1)
84
86
88
dB
μ
Audio carrier output ratio
P/S
S: fp+4.5MHz
14.5
16
17.5
dB
Audio 2
nd harmonic distortion
P/S2
S2: fp+2
×4.5MHz
50
65
dB
Audio 3
rd harmonic distortion
P/S3
S3: fp+3
×4.5MHz
45
55
dB
Chroma beat
P/CB
Vin = 3.58MHz , 0.6Vp-p
CB: fp+920kHz
65
72
dB
Video harmonic distortion
P/V2
Vin = 1MHz , 1Vp-p
V2: fp+2MHz
45
65
dB
Video type
Video modulation
Mp
Vin = Stair step, 1Vp-p
75
80
85
%
White clip level
(Max video modulation)
WCL
Vin = Stair step, 1.5Vp-p
88
93
98
%
Differential gain
DG
Vin = 10-Stair step, 1Vp-p
-5
5
%
Differential phase
DP
Vin = 10-Stair step, 1Vp-p
-5
5
Deg
Audio type
Audio modulation
Ms
Ain = 1kHz, 1Vp-p
(Note 2)
90
100
110
%
Maximum audio modulation
Msmx
THD<3%
400
%
Audio distortion
THD
Ain = 1 kHz, 1Vp-p
0.4
2
%
Audio S/N
AS/N
Ain = 1 kHz, 1Vp-p
Vin = Color bar, 1Vp-p
45
52
dB
Note 1:
9.5dB added to the RFOUT value measured with a analyzer of the input impedance of 50
Ω.
Note 2:
100% =
±25kHz modulation.
Cautions for use
• Set the variable L (between pins 9 and 10) of RFVCO so that the RF output frequency becomes 67.25MHz when
2.7 V is applied to V12 (pin 12) in the US4ch mode for the US specifications, 97.25MHz when 2.6V is applied to
V12 (pin 12) in the JPN2ch mode for the JPN specifications, and 211.25MHz when 2.5V is applied to V12 (pin
12) in the TWN13ch mode for the TWN specifications.
Set the C (pins 9-10) value of RF VCO, so that the V12 (pin 12) voltage difference
ΔV12 CH between US 4CH
and US3CH in the US specification and the V12 (pin 12) voltage difference
ΔV12CH between JPN2CH and
JPN1CH in the JPN specification becomes
ΔV12CH≤±0.25V. (This is necessary because the oscillation
frequency during free run (without PLL control) of PF VCO differs due to the floating capacity of pattern.)
• Handle pins 9 and 10 with care to prevent electrostatic breakdown because their high frequency characteristics
are extremely important.




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