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ENA0006 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA0006 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page LA7161BM/BV No.A0006-2/8 Electrical Characteristics/Operating Characteristics at Ta = 25 °C, VCC = 5.0V, Measured with US3ch unless otherwise specified Parameter Symbol Conditions Ratings Unit min typ max Current drain 1 ICC1 No signal, pin 6 high 26 37 48 mA Current drain 2 ICC2 No signal, pin 6 low 17 25 33 mA Regulator voltage Vreg No signal 3.7 3.9 4.1 V Antenna driver voltage Vanton Pin 6 high, 220 Ω load 3.2 3.5 3.8 V RF type Video carrier output US Pus No signal (Note 1) 85 87 89 dB μ Video carrier output JP Pjp No signal (Note 1) 84.5 86.5 88.5 dB μ Video carrier output TW Ptwn No signal (Note 1) 84 86 88 dB μ Audio carrier output ratio P/S S: fp+4.5MHz 14.5 16 17.5 dB Audio 2 nd harmonic distortion P/S2 S2: fp+2 ×4.5MHz 50 65 dB Audio 3 rd harmonic distortion P/S3 S3: fp+3 ×4.5MHz 45 55 dB Chroma beat P/CB Vin = 3.58MHz , 0.6Vp-p CB: fp+920kHz 65 72 dB Video harmonic distortion P/V2 Vin = 1MHz , 1Vp-p V2: fp+2MHz 45 65 dB Video type Video modulation Mp Vin = Stair step, 1Vp-p 75 80 85 % White clip level (Max video modulation) WCL Vin = Stair step, 1.5Vp-p 88 93 98 % Differential gain DG Vin = 10-Stair step, 1Vp-p -5 5 % Differential phase DP Vin = 10-Stair step, 1Vp-p -5 5 Deg Audio type Audio modulation Ms Ain = 1kHz, 1Vp-p (Note 2) 90 100 110 % Maximum audio modulation Msmx THD<3% 400 % Audio distortion THD Ain = 1 kHz, 1Vp-p 0.4 2 % Audio S/N AS/N Ain = 1 kHz, 1Vp-p Vin = Color bar, 1Vp-p 45 52 dB Note 1: 9.5dB added to the RFOUT value measured with a analyzer of the input impedance of 50 Ω. Note 2: 100% = ±25kHz modulation. Cautions for use • Set the variable L (between pins 9 and 10) of RFVCO so that the RF output frequency becomes 67.25MHz when 2.7 V is applied to V12 (pin 12) in the US4ch mode for the US specifications, 97.25MHz when 2.6V is applied to V12 (pin 12) in the JPN2ch mode for the JPN specifications, and 211.25MHz when 2.5V is applied to V12 (pin 12) in the TWN13ch mode for the TWN specifications. Set the C (pins 9-10) value of RF VCO, so that the V12 (pin 12) voltage difference ΔV12 CH between US 4CH and US3CH in the US specification and the V12 (pin 12) voltage difference ΔV12CH between JPN2CH and JPN1CH in the JPN specification becomes ΔV12CH≤±0.25V. (This is necessary because the oscillation frequency during free run (without PLL control) of PF VCO differs due to the floating capacity of pattern.) • Handle pins 9 and 10 with care to prevent electrostatic breakdown because their high frequency characteristics are extremely important. |
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