Part Name
         Description
MJ10009

 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS ( 8 Page)


MOTOROLA
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MJ10009
3
Motorola Bipolar Power Transistor Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
20
0.2
1
2
200
100
60
Figure 2. Collector Saturation Region
3
0.03
IB, BASE CURRENT (AMP)
1
0.05
0.1
0.2
0.5
1
2
3
2.6
2.2
1.8
1.4
TJ = 25°C
400
TJ = 150°C
VCE = 5 V
40
0.5
5
10
20
25
°C
IC = 5 A
10 A
20 A
VBE, BASE–EMITTER VOLTAGE (VOLTS)
104
103
102
101
100
0
+ 0.2
– 0.2
VCE = 250 V
TJ = 125°C
100
°C
25
°C
Figure 3. Collector–Emitter Saturation Voltage
2.4
0.2
IC, COLLECTOR CURRENT (AMP)
0.4
0.3
0.5 0.7
1
2
5
20
2
1.6
1.2
0.8
IC/IB = 10
TJ = – 55°C
7
3
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
0.2 0.3
0.5 0.7
2.4
2
1.6
1.2
Figure 5. Collector Cutoff Region
0.4
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50
1
2
20
60
10
0.6
200
70
TJ = 25°C
Cob
1000
500
100
100
200
400
10
25
°C
150
°C
2
5
20
7
3
10
1
25
°C
150
°C
25
°C
TJ = – 55°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 3 V
75
°C
10–1
+ 0.4
+ 0.8
+ 0.6
4
6
40
700
300
REVERSE
FORWARD
TYPICAL CHARACTERISTICS
1  2  3  4  5  6  7  8 



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