Part Name
         Description
MJ10012

 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS ( 6 Page)


MOTOROLA
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MJ10012 MJH10012
3
Motorola Bipolar Power Transistor Device Data
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005
0.01
0.02
0.05
1
2
2.5
2
1.5
1
TJ = 25°C
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103
102
101
100
10–1
IC = ICES
25
°C
REVERSE
FORWARD
Figure 5. Collector–Emitter Saturation Voltage
2.2
IC, COLLECTOR CURRENT (AMP)
0.2
0.1
1.8
1.4
1
0.6
Figure 6. Base–Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
2.4
2
1.6
1.2
IC = 0.5 A
10 A
3
IC/IB = 5
– 30
°C
25
°C
150
°C
25
°C
TJ = – 30°C
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 6 V
0.1
0.3
0.5 0.7
1
2
5
7
3
10
VCE = 250 V
TJ = 150°C
75
°C
0
+ 0.2
– 0.2
+ 0.4
+ 0.8
+ 0.6
6
0.2
0.1
0.5
TJ = 150°C
1
2
0.3
5
7
10
0.2
3
0.7
0.5
0.2
10
Figure 7. Turn–Off Switching Time
IC, COLLECTOR CURRENT (AMP)
7
5
3
2
1
0.5
0.1
0.5 0.7
TJ = 25°C
IC/IB = 20
VCE = 12 Vdc
0.3
tf
ts
Figure 8. Collector Cutoff Region
0.2 0.3
1
2
5
7
3
10
20
0.2
0.7
2000
0.1
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
2
3
5
10
700
100
50
30
TJ = 150°C
25
°C
30
°C
VCE = 3 Vdc
VCE = 6 Vdc
70
200
300
500
1000
7
25
°C
1  2  3  4  5  6 



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