SOT-523 Plastic-Encapsulate MOSFETS

N-channel MOSFET

FEATURES

Low on-resistance

Fast switching speed

Low voltage drive makes this device ideal for portable equipment

Easily designed drive circuits

Easy to parallel

Marking: KN

Equivalent circuit

Symbol Parameter

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

0.1

A

Power Dissipation

0.15

W

Junction Temperature

150

℃

Storage Temperature

-55~+150

℃

℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

µA

Gate –Source leakage current

±1

µA

Gate Threshold Voltage

0.8

1.5

V

8

Ω

Drain-Source On-Resistance

13

Ω

Forward Transconductance

20

mS

Dynamic Characteristics*

Input Capacitance

13

pF

Output Capacitance

9

pF

Reverse Transfer Capacitance

4

pF

Switching Characteristics*

Turn-On Delay Time

15

ns

Rise Time

35

ns

Turn-Off Delay Time

80

ns

Fall Time

80

ns

SOT-523

1. GATE

2. SOURCE

3. DRAIN

Thermal Resistance, Junction-to-Ambient

833

℃ /W

* These parameters have no way to verify.

1

2012-0

WILLAS ELECTRONIC CORP.

2SK3019TT1

Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

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Package outline

Mechanical data

Epoxy : UL94-V0 rated flame retardant

,

Method 2026

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0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

SOD-123H

Pb Free Product

1.0A SURFACE MOUNT SCHOTTKY

SOD-123

PACKAGE

WILLAS

BARRIER RECTIFIERS -20V- 200V

FM120-M

THRU

FM1200-M

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

WILLAS ELECTRONIC CORP.

201

2-06

 

RATINGS

Marking Code

12

13

14

15

16

18

10

115

120

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

20

30

40

50

60

80

100

150

200

14

21

28

35

42

56

70

105

140

20

30

40

50

60

80

100

150

200

Volts

Volts

Volts

Maximum Average Forward Rectified Current

 

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

 

1.0

 

30

Amps

 

Amps

Typical Thermal Resistance (Note 2)

Typical Junction Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

TSTG

 

 

-55 to +125

40

120

 

- 65 to +175

 

 

-55 to +150

℃/W

PF

℃

℃

 

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

0.50

0.70

0.85

0.9

0.92

Volts

@TA=25℃

0.5

Maximum Average Reverse Current at

Rated DC Blocking Voltage

@TA=125℃

10

 

mAmps

 

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

 

 

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

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Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”