Part Name
         Description
MJ10020

 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS ( 8 Page)


MOTOROLA
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MJ10020 MJ10021
3
Motorola Bipolar Power Transistor Device Data
0.2
0.4
6.0 8.0 10
20
100
0.1
40
60 80
2.0
1000
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0 7.0
10
20
100
500
70
50
0.1
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
10
2.1
1.8
0.9
0.6
Figure 3. Collector–Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
5.0
0.01
Figure 4. Base–Emitter Voltage
IB, BASE CURRENT (AMPS)
0.1
10
4.5
0.5
700
VCE = 5.0 V
30
0.3
IC = 1.0 A
TJ = 25°C
TJ = 100°C
3.0
VR, REVERSE VOLTAGE (VOLTS)
20
100
1000
– 0.2
Figure 5. Collector Cutoff Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
10 –1
Figure 6. Output Capacitance
104
100
103
100
0
+ 0.2
+ 0.4
+ 0.8
VCE = 250 V
TJ = 125°C
= 10 A
100
°C
75
°C
25
°C
TJ = 25°C
100
200
10
20
1.0
30
50
70
TJ = 25°C
3.0
5.0 7.0
20
100
30
50
70
+ 0.6
700
500
300
200
300
200
70
50
30
10
7.0
5.0
TJ = 100°C
TJ = 25°C
IC/IB = 25
= 30 A
= 60 A
TJ = 100°C
TJ = 25°C
5.0
2.0
1.0
0.5
0.2
0.02
0.05
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.5
2.4
2.7
3.0
2.1
1.8
0.9
0.6
0.3
1.2
1.5
2.4
2.7
3.0
IC/IB = 25
3.0
0.3
TYPICAL ELECTRICAL CHARACTERISTICS
1  2  3  4  5  6  7  8 



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