MJ10022 datasheet(6/8 Pages) MOTOROLA | 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS

6 page

MJ10022 MJ10023

Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 13 and 14 are

specified for these devices under the test conditions shown.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

5.0

1.0

VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

300

500

TC = 25°C

IC/IB ≥ 20

°C ≤ TJ ≤ 100°C

100

200

400

0.1

0.01

200

400

700

µs

(TURN–ON SWITCHING)

5.0

0.5

0.05

2.0

0.2

0.02

600

100

Figure 13. Maximum Forward Bias Safe

Operating Area

Figure 14. Maximum RBSOA, Reverse Bias

Safe Operating Area

TURN–OFF LOAD LINE

FOR MJ10023

THE LOCUS FOR

MJ10022 IS 50 V LESS

BONDING WIRE LTD

THERMAL LTD

SECOND BREAKDOWN LTD

MJ10022

MJ10023

2 V

≤ VBE(off) ≤ 8 V

RBE = 24 Ω

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 13 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25°C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 13 may be found at any case tem-

perature by using the appropriate curve on Figure 15.

TJ(pk) may be calculated from the data in Figure 12. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current condition allowable dur-

ing reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 14 gives the RBSOA character-

istics.

TC, CASE TEMPERATURE (°C)

120

100

200

SECOND BREAKDOWN

DERATING

160

THERMAL

DERATING

Figure 15. Power Derating

Part Number	Components Description	Html View	Manufacturer
MJ10015	50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10012	10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10020	60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10007	10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS	1 2 3 4 5 More	Motorola, Inc
MJE13002	1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10000	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10009	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS	1 2 3 4 5 More	Motorola, Inc
MJD47	NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ10005	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS	1 2 3 4 5 More	Motorola, Inc
MJH11017	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 200 250 VOLTS 150 WATTS	1 2 3 4 5 More	Motorola, Inc

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