Part Name
         Description
MJ10022

 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS ( 8 Page)


MOTOROLA
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MJ10022 MJ10023
3
Motorola Bipolar Power Transistor Device Data
1.0
2.0
5.0
40
0.4
10
1.0
300
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
5.0
40
200
50
0.4
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
5.0
2.1
1.8
0.9
0.6
Figure 3. Collector–Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
5.0
0.01
Figure 4. Base–Emitter Saturation Voltage
IB, BASE CURRENT (AMP)
0.1
10
4.5
0.5
VCE = 5 V
0.3
IC = 10 A
4.5
VR, REVERSE VOLTAGE (VOLTS)
20
100
400
– 0.2
Figure 5. Collector Cutoff Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
10 –1
Figure 6. Cob, Output Capacitance
104
40
103
100
0
+ 0.2
+ 0.8
VCE = 250 V
TJ = 125°C
100
°C
75
°C
25
°C
100
30
0.4
10
2.0
10
40
20
+ 0.6
200
100
50
400
200
50
10
IC/IB = 10
TJ = 100°C
TJ = 25°C
5.0
2.0
1.0
0.5
0.2
0.02
0.05
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.5
2.4
2.7
3.0
2.1
1.8
0.9
0.6
0.3
1.2
1.5
2.4
2.7
3.0
TJ = 100°C
IC = 20 A
VCE @ 100°C
VCE @ 25°C
VBE @ 100°C
VBE @ 25°C
20
IC = 40 A
20
IC/IB = 10
+ 0.4
TYPICAL ELECTRICAL CHARACTERISTICS
1  2  3  4  5  6  7  8 



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