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SE9435LT1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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SE9435LT1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 4 page ▼ ▼ ▼ ▼ Simple Drive Requirement ▼ ▼ ▼ ▼ Small Package Outline ▼ ▼ ▼ ▼ Surface Mount Device G D S 30V P-Channel Enhancement-Mode MOSFET Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current ID -5.3 A Pulsed Drain Current 1) IDM -20 Maximum Power Dissipation TA = 25 oC PD 1.4 W TA = 75 oC 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC Junction-to-Case Thermal Resistance RθJC 50 oC/W Junction-to-Ambient Thermal Resistance (PCB mounted) 2) RθJA 90 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in 2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Shipping P94 Marking 3000/Tape&Reel SE9435LT1 Ordering Information 1 2 3 2012-10 WILLAS ELECTRONIC CORP. SE9435LT1 SOT-23 Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” |
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