1

Motorola Bipolar Power Transistor Device Data

Advance Information

Complementary Silicon Power

Transistors

The MJ15011 and MJ15012 are PowerBase power transistors designed for

high–power audio, disk head positioners, and other linear applications. These devices

can also be used in power switching circuits such as relay or solenoid drivers,

dc–to–dc converters or inverters.

• High Safe Operating Area (100% Tested)

1.2 A @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

hFE = 20 (Min) @ 2 A, 2 V

VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A

• For Low Distortion Complementary Designs

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

250

Vdc

Collector–Emitter Voltage

VCEX

250

Vdc

Emitter–Base Voltage

VEB

5

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

10

15

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

2

5

Adc

Emitter Current — Continuous

— Peak (1)

IE

IEM

12

20

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

200

1.14

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.875

_C/W

Maximum Lead Temperature for Soldering Purposes

TL

265

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ15011/D

MJ15011

MJ15012

10 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

250 VOLTS

200 WATTS

NPN

PNP

CASE 1–07

TO–204AA

(TO–3)

*

*

*Motorola Preferred Device