Electronic Components Datasheet Search |
|
A4957 Datasheet(PDF) 10 Page - Allegro MicroSystems |
|
A4957 Datasheet(HTML) 10 Page - Allegro MicroSystems |
10 / 16 page Bootstrap Capacitor Selection The bootstrap capacitors, CBOOTx, must be correctly selected to ensure proper operation of the A4957. If the capacitances are too high, time will be wasted charging the capacitor, resulting in a limit on the maximum duty cycle and the PWM frequency. If the capacitances are too low, there can be a large voltage drop at the time the charge is transferred from CBOOTx to the MOSFET gate, due to charge sharing. To keep this voltage drop small, the charge in the bootstrap capacitor, QBOOT, should be much larger than the charge required by the gate of the MOSFET, QGATE. A factor of 20 is a reason- able value, and the following formula can be used to calculate the value for CBOOT: CBOOT QBOOT CBOOT VBOOT VBOOT = = QGATE 20 = QGATE 20 where VBOOT is the voltage across the bootstrap capacitor. The voltage drop across the bootstrap capacitor as the MOSFET is being turned on, ΔV, can be approximated by: ∆V ≈ QGATE CBOOT So for a factor of 20, ΔV would be approximately 5% of VBOOT. The maximum voltage across the bootstrap capacitor under normal operating conditions is VREG(max). In most applications, with a good ceramic capacitor the working voltage can be limited to 16 V. Bootstrap Charging It is good practice to ensure the high side bootstrap capacitor is completely charged before a high side PWM cycle is requested. The time required to charge the capacitor, tCHARGE (μs), is approximated by: tCHARGE ≈ 100 CBOOT ∆V where CBOOT is the value of the bootstrap capacitor, in nF, and ΔV is the required voltage of the bootstrap capacitor. At power-up and when the drives have been disabled for a long time, the bootstrap capacitor can be completely discharged. In this case ΔV can be considered to be the full high-side drive voltage, 12 V. Otherwise, ΔV is the amount of voltage dropped during the charge transfer, which should be 400 mV or less. The capacitor is charged whenever the Sx pin is pulled low and current flows from VREG through the internal bootstrap diode circuit to CBOOT. Bootstrap Charge Management The A4957 provides automatic bootstrap capacitor charge management. The bootstrap capacitor voltage for each phase is continuously checked to ensure that it is above the bootstrap under-voltage threshold, VBOOTUV. If the bootstrap capacitor voltage drops below this threshold, when the corresponding high-side is active, the A4957 will turn on the necessary low-side MOSFET, and continue charging until the bootstrap capacitor exceeds the undervoltage threshold plus the hysteresis, VBOOTUV + VBOOTUVHYS . If the bootstrap capacitor voltage is below the threshold, when the corresponding high-side is commanded to turn on, the A4957 will not attempt to turn on the high-side MOSFET, but will turn on the necessary low-side MOSFET to charge the bootstrap capacitor until it exceeds the undervoltage threshold plus the hysteresis. The minimum charge time is typically 7 μs, but may be longer for very large values of bootstrap capacitor (>1000 nF). If the bootstrap capacitor voltage does not reach the threshold within approximately 200 μs, an undervoltage fault will be flagged. VREG Capacitor Selection The internal reference, VREG, supplies current for the low-side gate drive circuits and the charging current for the bootstrap capacitors. When a low-side MOSFET is turned on, the gate- drive circuit will provide the high transient current to the gate that is necessary to turn on the MOSFET quickly. This current, which can be several hundred milliamperes, cannot be provided directly by the limited output of the VREG regulator, and must be sup- plied by an external capacitor connected to the VREG pin. The turn-on current for the high-side MOSFET is similar in value to that for the low-side MOSFET, but is mainly supplied by the bootstrap capacitor. However the bootstrap capacitor must then be recharged from the VREG regulator output. Unfortunately the bootstrap recharge can occur a very short time after the low-side turn-on occurs. This requires that the value of the capacitor con- nected between VREG and AGND should be high enough to min- imize the transient voltage drop on VREG for the combination of a low-side MOSFET turn-on and a bootstrap capacitor recharge. A value of 20 × CBOOT is a reasonable value. The maximum working voltage will never exceed VREG, so the capacitor can be rated as low as 15 V. This capacitor should be placed as close as possible to the VREG pin. Full Bridge MOSFET Driver A4957 10 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com |
Similar Part No. - A4957 |
|
Similar Description - A4957 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |