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ACS758LCB-100U-PFF-T Datasheet(PDF) 6 Page - Allegro MicroSystems |
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ACS758LCB-100U-PFF-T Datasheet(HTML) 6 Page - Allegro MicroSystems |
6 / 21 page Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 μΩ Current Conductor ACS758xCB 6 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com COMMON OPERATING CHARACTERISTICS1 valid at T OP = –40°C to 150°C and VCC = 5 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units Supply Voltage2 VCC 3 5.0 5.5 V Supply Current ICC Output open – 10 13.5 mA Power-On Delay tPOD TA = 25°C – 10 – μs Rise Time3 tr IP step = 60% of IP+, 10% to 90% rise time, TA = 25°C, COUT = 0.47 nF –3– μs Propagation Delay Time3 tPROP TA = 25°C, COUT = 0.47 nF – 1 – μs Response Time tRESPONSE Measured as sum of tPROP and tr –4– μs Internal Bandwidth4 BWi –3 dB; TA = 25°C, COUT = 0.47 nF – 120 – kHz Output Load Resistance RLOAD(MIN) VIOUT to GND 4.7 – – kΩ Output Load Capacitance CLOAD(MAX) VIOUT to GND – – 10 nF Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – μΩ Symmetry3 ESYM Over half-scale of Ip 99 100 101 % Quiescent Output Voltage5 VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25°C – VCC/2 – V VIOUT(QUNI) Unidirectional variant, IP = 0 A, TA = 25°C, VIOUT(QUNI) is ratiometric to VCC – 0.6 – V Ratiometry3 VRAT VCC = 4.5 to 5.5 V – 100 – % 1Device is factory-trimmed at 5 V, for optimal accuracy. 2Devices are programmed for maximum accuracy at 5.0 V VCC levels. The device contains ratiometry circuits that accurately alter the 0 A Output Volt- age and Sensitivity level of the device in proportion to the applied VCC level. However, as a result of minor nonlinearities in the ratiometry circuit ad- ditional output error will result when VCC varies from the 5 V VCC level. Customers that plan to operate the device from a 3.3 V regulated supply should contact their local Allegro sales representative regarding expected device accuracy levels under these bias conditions. 3See Characteristic Definitions section of this datasheet. 4Calculated using the formula BWi = 0.35 / tr. 5VIOUT(Q) may drift over the lifetime of the device by as much as ±25 mV. |
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