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CM450DY-24S Datasheet(PDF) 4 Page - Powerex Power Semiconductors |
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CM450DY-24S Datasheet(HTML) 4 Page - Powerex Power Semiconductors |
4 / 6 page CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Voltstt Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 09/11 Rev. 1 Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT — — 0.045 K/W Thermal Resistance, Junction to Case*2 Rth(j-c)D Per Inverter FWDi — — 0.068 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 0.018 — K/W Case to Heatsink*2 (Per 1 Module)*6 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb Creepage Distance ds Terminal to Terminal — — — mm Terminal to Baseplate — — — mm Clearance da Terminal to Terminal — — — mm Terminal to Baseplate — — — mm Weight m — 580 — Grams Flatness of Baseplate ec On Centerline X, Y*7 -100 — ±100 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 8 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. X BOTTOM – CONCAVE 3 mm + CONVEX BOTTOM BOTTOM LABEL SIDE Y 0 0 Di1 Di1 Di1 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1 Di2 Di2 Di2 21.5 21.6 35.0 48.2 48.4 45.6 33.3 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip. |
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