HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200702

Issued Date : 2007.03.01

Revised Date : 2007.03.28

Page No. : 1/4

H3055MJ

HSMC Product Specification

H3055MJ

N-Channel Enhancement-Mode MOSFET (30V, 12A)

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced

trench process. It has been optimized for power management applications with a

wide range of gate drive voltage (2.5V-10V)

Features

• High Density Cell Design for Ultra Low On-Resistance

• High Power and Current Handing Capability

• Fully Characterized Avalanche Voltage and Current

• Ideal for Li ion Battery Pack Applications

Applications

• Battery Protection

• Load Switch

• Power Management

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current (Continuous)

12

A

Drain Current (Pulsed)

*1

30

A

2

W

1.3

W

Operating and Storage Temperature Range

-55 to +150

°C

Thermal Resistance Junction to Ambient

*2

62.5

°C/W

*1: Maximum DC current limited by the package

*2: 1-in

H3055MJ Pin Assignment

1

2

3

Tab

3-Lead Plastic TO-252

Package Code: J

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Internal Schematic

Diagram

G

D

S