MJD122T4 datasheet(2/8 Pages) MOTOROLA

Part #	MJD122T4

Description	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MJD122 MJD127

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS — continued

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

ICEX

—

10

500

µAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

—

10

µAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

—

2

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 8 Adc, VCE = 4 Vdc)

hFE

1000

100

12,000

—

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 16 mAdc)

(IC = 8 Adc, IB = 80 mAdc)

VCE(sat)

—

2

4

Vdc

Base–Emitter Saturation Voltage (1)

(IC = 8 Adc, IB = 80 mAdc)

VBE(sat)

—

4.5

Vdc

Base–Emitter On Voltage

(IC = 4 Adc, VCE = 4 Vdc)

VBE(on)

—

2.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain–Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

|hfe|

4

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJD127

MJD122

Cob

—

300

200

pF

Small–Signal Current Gain

(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)

hfe

300

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

Figure 1. Power Derating

25

T, TEMPERATURE (

°C)

0

50

75

100

125

150

20

15

10

5

2.5

0

2

1.5

1

0.5

TA TC

TA

SURFACE

MOUNT

TC

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