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MJD210-1 Datasheet(PDF) 1 Page - Motorola, Inc |
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MJD210-1 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Bipolar Power Transistor Device Data Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc • High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Base Voltage VCB 40 Vdc Collector–Emitter Voltage VCEO 25 Vdc Emitter–Base Voltage VEB 8 Vdc Collector Current — Continuous Peak IC 5 10 Adc Base Current IB 1 Adc Total Device Dissipation @ TC = 25_C Derate above 25 _C PD 12.5 0.1 Watts W/ _C Total Device Dissipation @ TA = 25_C* Derate above 25 _C PD 1.4 0.011 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient* R θJC R θJA 10 89.3 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) 25 — Vdc Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125_C) ICBO — — 100 100 nAdc Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) IEBO — 100 nAdc * When surface mounted on minimum pad sizes recommended. (continued) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle [ 2%. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D © Motorola, Inc. 1995 MJD200 MJD210 CASE 369A–13 SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS inches mm NPN PNP REV 1 |
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