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AOB298L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB298L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 58A/33A RDS(ON) (at VGS=10V) < 14.5m Ω 100% UIS Tested 100% Rg Tested Symbol VDS VGS ±20 The AOT298L & AOB298L & AOTF298L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 100V AOT298L/AOB298L AOTF298L Drain-Source Voltage 100 V Gate-Source Voltage G D S TO-263 D2PAK G D S G D S D S G Top View TO-220F TO-220 AOTF298L AOT298L AOB298L VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Power Dissipation A 15 TC=100°C Power Dissipation B PD 50 16 -55 to 175 Junction and Storage Temperature Range °C/W °C/W Maximum Junction-to-Ambient A D 1.5 60 4.5 Maximum Junction-to-Case A ±20 W TC=25°C W TA=70°C 1.33 TA=25°C 2.1 PDSM 100 33 20 33 41 26 130 Thermal Characteristics Parameter AOT298L/AOB298L AOTF298L TA=25°C IDSM A TA=70°C ID Pulsed Drain Current C Continuous Drain Current V 9 58 20 Gate-Source Voltage Maximum Junction-to-Ambient A °C/W RθJA 15 60 TC=25°C TC=100°C mJ Avalanche Current C 7 A Avalanche energy L=0.1mH C Continuous Drain Current Units °C Rev 0 : Oct. 2011 www.aosmd.com Page 1 of 7 |
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