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MJE15028 Datasheet(PDF) 1 Page - Motorola, Inc |
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MJE15028 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Bipolar Power Transistor Device Data Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031 • High Current Gain — Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc • TO–220AB Compact Package MAXIMUM RATINGS Rating Symbol MJE15028 MJE15029 MJE15030 MJE15031 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCB 120 150 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous — Peak IC 8.0 16 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 50 0.40 Watts W/ _C Total Power Dissipation @ TA = 25_C Derate above 25 _C PD 2.0 0.016 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.5 _C/W Thermal Resistance, Junction to Ambient R θJA 62.5 _C/W 0 Figure 1. Power Derating T, TEMPERATURE ( °C) 0 40 60 100 120 160 40 TC 20 60 0 2.0 TA 1.0 3.0 80 140 TC TA 20 Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE15028/D © Motorola, Inc. 1995 MJE15028 MJE15030 MJE15029 MJE15031 *Motorola Preferred Device 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120 – 150 VOLTS 50 WATTS * NPN PNP * * * CASE 221A–06 TO–220AB |
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