Part Name
         Description
MJE16002

 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS ( 10 Page)


MOTOROLA
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MJE16002 MJE16004
6
Motorola Bipolar Power Transistor Device Data
10
0
1000
100
500
βf ≥ 4
TJ ≤ 100°C
850
VBE(off) = 1.0 to 5.0 V
0
VCE(pk), PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
700
VBE(off) = 0 V
10
µs
1.0 ms
dc
10
7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
450
2.0
1.0
5.0
0.5
0.05
0.02
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
70 100
200
TC = 25°C
0.2
0.01
Figure 16. Maximum Rated Forward Bias
Safe Operating Area (MJE16002 and MJE16004)
300
5.0
20
50
Figure 17. Maximum Rated Reverse Bias
Safe Operating Area
9.0
6.0
7.0
8.0
3.0
4.0
5.0
1.0
2.0
TC, CASE TEMPERATURE (°C)
0
40
120
160
0.6
SECOND BREAKDOWN
DERATING
1.0
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
Figure 18. Power Derating
0.1
SAFE OPERATING AREA INFORMATION
1  2  3  4  5  6  7  8  9  10 



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