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AO4476A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO4476A
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4476A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AO4476A Datasheet HTML 1Page - Alpha & Omega Semiconductors AO4476A Datasheet HTML 2Page - Alpha & Omega Semiconductors AO4476A Datasheet HTML 3Page - Alpha & Omega Semiconductors AO4476A Datasheet HTML 4Page - Alpha & Omega Semiconductors AO4476A Datasheet HTML 5Page - Alpha & Omega Semiconductors AO4476A Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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AO4476A
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.5
1.98
2.5
V
ID(ON)
110
A
6.4
7.7
TJ=125°C
10
12
8.6
10.8
m
gFS
45
S
VSD
0.74
1
V
IS
4
A
Ciss
920
1150
1380
pF
Coss
125
180
235
pF
Crss
60
105
150
pF
Rg
0.55
1.1
1.65
Qg(10V)
16
20
24
nC
Qg(4.5V)
7.6
9.5
11.4
nC
Qgs
2
2.7
3.2
nC
Qgd
3
5
7
nC
tD(on)
6.5
ns
t
2
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
V
=10V, V =15V, R =1
Ω,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=15V, ID=15A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
IS=1A,VGS=0V
VDS=5V, ID=15A
VGS=4.5V, ID=12A
IDSS
µA
VDS=VGS ID=250µA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=15A
RDS(ON)
Static Drain-Source On-Resistance
tr
2
ns
tD(off)
17
ns
tf
3.5
ns
trr
7
8.7
10.5
ns
Qrr
11
13.5
16
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
Turn-Off Fall Time
IF=15A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev1: September 2010
www.aosmd.com
Page 2 of 6


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