Electronic Components Datasheet Search |
|
AO4476A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
|
AO4476A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AO4476A Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.5 1.98 2.5 V ID(ON) 110 A 6.4 7.7 TJ=125°C 10 12 8.6 10.8 m Ω gFS 45 S VSD 0.74 1 V IS 4 A Ciss 920 1150 1380 pF Coss 125 180 235 pF Crss 60 105 150 pF Rg 0.55 1.1 1.65 Ω Qg(10V) 16 20 24 nC Qg(4.5V) 7.6 9.5 11.4 nC Qgs 2 2.7 3.2 nC Qgd 3 5 7 nC tD(on) 6.5 ns t 2 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Forward Transconductance Diode Forward Voltage V =10V, V =15V, R =1 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=15A Gate Source Charge Gate Drain Charge Total Gate Charge m Ω IS=1A,VGS=0V VDS=5V, ID=15A VGS=4.5V, ID=12A IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=15A RDS(ON) Static Drain-Source On-Resistance tr 2 ns tD(off) 17 ns tf 3.5 ns trr 7 8.7 10.5 ns Qrr 11 13.5 16 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω Turn-Off Fall Time IF=15A, dI/dt=500A/µs Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev1: September 2010 www.aosmd.com Page 2 of 6 |
Similar Part No. - AO4476A |
|
Similar Description - AO4476A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |