AO4496_12 datasheet(2/5 Pages) AOSMD

Part #	AO4496

Description	30V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

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AO4496

Symbol

Min

Typ

Max

Units

BVDSS

30

V

1

TJ = 55°C

5

IGSS

±100

nA

VGS(th)

1.4

1.8

2.5

V

ID(ON)

50

A

16

19.5

TJ=125°C

24

29

21

26

gFS

30

S

VSD

0.76

1

V

IS

3

A

Ciss

550

715

pF

Coss

110

pF

Crss

55

pF

Rg

3

4

4.9

Ω

Maximum Body-Diode Continuous Current

VGS=0V, VDS=0V, f=1MHz

VGS=0V, VDS=15V, f=1MHz

Input Capacitance

µA

Output Capacitance

IS = 1A,VGS = 0V

VDS = 5V, ID = 10A

Forward Transconductance

Gate resistance

SWITCHING PARAMETERS

DYNAMIC PARAMETERS

m

Ω

Gate Threshold Voltage

VDS = VGS ID = 250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

RDS(ON)

Drain-Source Breakdown Voltage

VGS = 10V, ID = 10A

Reverse Transfer Capacitance

Static Drain-Source On-Resistance

Diode Forward Voltage

VGS = 4.5V, ID = 7.5A

On state drain current

ID = 250µA, VGS = 0V

VGS = 10V, VDS = 5V

VDS = 30V, VGS = 0V

VDS = 0V, VGS = ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

Qg (10V)

9.8

13

nC

Qg (4.5V)

4.6

6.1

nC

Qgs

1.8

nC

Qgd

2.2

nC

tD(on)

5

ns

tr

3.2

ns

tD(off)

24

ns

tf

6

ns

trr

22

29

ns

Qrr

14

nC

0

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Total Gate Charge

VGS=10V, VDS=15V, ID=10A

SWITCHING PARAMETERS

Turn-Off DelayTime

VGS=10V, VDS=15V, RL= 1.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs

IF=10A, dI/dt=500A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A = 25°C. The

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using t

≤

300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t

≤

10s thermal resistance rating.

G. E

AR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.

Rev5: Nov. 2010

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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