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AO4496 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4496 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page AO4496 Product Summary V DS (V) = 30V I D = 10A (V GS = 10V) R DS(ON) < 19.5mΩ (V GS = 10V) R DS(ON) < 26mΩ (V GS = 4.5V) 100% UIS Tested 100% Rg Tested General Description The AO4496 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. SOIC-8 Top View Bottom View D D D Symbol VDS VGS IDM IAR EAR TJ, TSTG Parameter Symbol Typ Max t ≤ 10s 31 40 Steady State 59 75 Steady State RθJL 16 24 W ±20 °C/W RθJA °C -55 to 150 2.0 Absolute Maximum Ratings TJ=25°C unless otherwise noted PD Maximum Junction-to-Lead C °C/W Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Ambient A Units Parameter TA=25°C TA=70°C V V ID Gate-Source Voltage Drain-Source Voltage 30 Pulsed Drain Current B Avalanche Current G Continuous Drain Current A Power Dissipation A TA=25°C Junction and Storage Temperature Range TA=70°C Maximum 10 7.5 3.1 Repetitive avalanche energy L=0.1mH G mJ 50 A 17 14 D D D S S S G G S Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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