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AO4609 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4609 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 7 page Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W RθJL n-ch 35 40 °C/W p-ch 56 62.5 °C/W p-ch 81 110 °C/W RθJL p-ch 40 48 °C/W Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel -30 Gate-Source Voltage ±20 ±12 ID 8.5 Drain-Source Voltage 30 -3 A TA=70°C 6.6 -2.4 Pulsed Drain Current B 40 -6 Continuous Drain Current A TA=25°C Power Dissipation TA=25°C PD 22 W TA=70°C 1.28 1.28 Junction and Storage Temperature Range -55 to 150 -55 to 150 Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State AO4609 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 8.5A (VGS=10V) -3A (VGS = -10V) RDS(ON) RDS(ON) < 18m Ω (VGS=10V) < 130m Ω (VGS = -10V) < 28m Ω (VGS=4.5V) < 180m Ω (VGS = -4.5V) < 260m Ω (VGS = -2.5V) General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony 259 specifications). AO4609L is a Green Product ordering option. AO4609 and AO4609L are electrically identical. G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 SOIC-8 G2 D2 S2 G1 D1 S1 n-channel p-channel |
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