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AO4620 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4620 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Symbol Device Typ Max Units n-ch 50 62.5 °C/W n-ch 80 100 °C/W RθJL n-ch 32 40 °C/W p-ch 50 62.5 °C/W p-ch 80 100 °C/W RθJL p-ch 32 40 °C/W Pulsed Drain Current B 2 TA=70°C Power Dissipation F TA=25°C PD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Continuous Drain Current F 30 -30 ±20 Drain-Source Voltage ±20 Gate-Source Voltage TA=25°C ID TA=70°C W 7.2 6.2 64 2 1.44 1.44 A -40 -4.5 -5.3 Maximum Junction-to-Lead C Steady-State Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Repetitive avalanche energy 0.3mH B 12 43 Avalanche Current B Junction and Storage Temperature Range -55 to 150 -55 to 150 9 17 AO4620 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel V DS (V) = 30V -30V I D = 7.2A (VGS=10V) -5.3A (V GS = -10V) R DS(ON) R DS(ON) < 24m Ω (V GS=10V) < 32m Ω (V GS = -10V) < 36m Ω (V GS=4.5V) < 55m Ω (V GS = -4.5V) 100% UIS tested 100% Rg tested General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. G1 D1 S1 n-channel p-channel G2 D2 S2 G1 S1 G2 S2 D1 D1 D2 D2 2 4 5 1 3 8 6 7 Top View SOIC-8 Top View Bottom View Pin1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AO4620_12 |
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Similar Description - AO4620_12 |
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