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AO4801A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4801A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO4801A Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.5 -0.9 -1.3 V ID(ON) -28 A 40 48 TJ=125°C 60 72 45 57 m Ω 60 80 m Ω gFS 18 S VSD -0.7 -1 V IS -2.5 A Ciss 515 645 780 pF Coss 55 80 105 pF Crss 30 55 80 pF Rg 4 7.8 12 Ω Qg(4.5V) 5 7 9 nC Qgs 1.5 nC Qgd 2.5 nC tD(on) 6.5 ns tr 3.5 ns tD(off) 41 ns tf 9 ns trr 11 15 ns Qrr 3.5 5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A Reverse Transfer Capacitance IF=-5A, dI/dt=100A/µs VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA VDS=VGS ID=-250µA VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance m Ω IS=-1A,VGS=0V VDS=-5V, ID=-5A VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time VGS=-4.5V, VDS=-15V, ID=-5A Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev 3: Mar. 2011 www.aosmd.com Page 2 of 5 |
Similar Part No. - AO4801A_11 |
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