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AO4828 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4828 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 4 page AO4828 60V Dual N-Channel MOSFET Symbol VDS VGS IDM IAR, IAS EAR, EAS TJ, TSTG Symbol Typ Max 48 62.5 74 110 RθJL 35 60 A Repetitive avalanche energy 0.1mH B 18 mJ W Junction and Storage Temperature Range A PD °C 2 1.28 -55 to 150 TA=70°C ID Continuous Drain Current AF Maximum Units Parameter TA=25°C TA=70°C 60 Maximum Junction-to-Ambient A Steady-State 4.5 3.6 20 Avalanche Current B 19 °C/W Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±20 Pulsed Drain Current B Power Dissipation TA=25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Features VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) 100% UIS tested 100% Rg tested General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. G2 D 2 S2 G1 D 1 S1 G1 S1 G2 S2 D1 D1 D2 D2 Top View SOIC-8 Top View Bottom View Pin1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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