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AO4924 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4924 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  Symbol Max FET1 Max FET2 VDS 30 30 VGS ±12 ±12 9.0 7.3 7.2 5.9 IDM 40 40 IAR 16 12 EAR 38 22 2.0 2.0 1.3 1.3 TJ, TSTG -55 to 150 -55 to 150 Symbol Typ Max 48 62.5 74 90 RθJL 32 40 Symbol Typ Max 48 62.5 74 90 RθJL 32 40 Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics FET2 Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Avalanche Current B A Repetitive avalanche energy L=0.3mH B mJ °C Maximum Junction-to-Ambient A Steady-State A W Units Parameter Power Dissipation TA=25°C PDSM TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V Gate-Source Voltage Drain-Source Voltage °C/W Thermal Characteristics FET1 Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W °C/W Continuous Drain Current A TA=25°C Maximum Junction-to-Lead C Steady-State Junction and Storage Temperature Range TA=70°C IDSM Pulsed Drain Current B AO4924 Asymmetric Dual N-Channel MOSFET Product Summary FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID = 9A ID=7.3A (VGS = 10V) RDS(ON) < 15.8mΩ <24m Ω (VGS = 10V) RDS(ON) < 19.5mΩ <29m Ω (VGS = 4.5V) 100% UIS Tested 100% Rg Tested General Description The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC- DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. SRFET TM SOIC-8 Top View Bottom View Pin1 G2 S2 G1 S1 D2 D2 D1 D1 2 4 5 1 3 8 6 7 Top View SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G1 D1 S1 G2 D2 S2 Alpha & Omega Semiconductor, Ltd. |
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