AO4932 datasheet(5/9 Pages) AOSMD

Part #	AO4932

Description	Asymmetric Dual N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

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AO4932

FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

12

0

2

4

6

8

10

12

0

5

10

15

20

25

30

I

S (A)

di/dt=800A/

µs

125ºC

25ºC

Q

rr

I

rm

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

0

5

10

15

20

25

30

I

S (A)

di/dt=800A/

µs

125ºC

25ºC

t

rr

S

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

0

50

100

150

200

Temperature (°C)

Figure 12: Diode Reverse Leakage Current vs.

Junction Temperature

V

DS=15V

V

DS=30V

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0

50

100

150

200

Temperature (°C)

Figure 13: Diode Forward voltage vs. Junction

Temperature

I

S=1A

10A

20A

5A

40

I

S (A)

Figure 14: Diode Reverse Recovery Charge and Peak

Current vs. Conduction Current

0

2

4

6

8

10

0

2

4

6

8

10

0

200

400

600

800

1000

di/dt (A/

µµµµs)

Figure 16: Diode Reverse Recovery Charge and Peak

Current vs. di/dt

125ºC

25ºC

I

s=20A

Q

rr

I

rm

I

S (A)

Figure 15: Diode Reverse Recovery Time and

Softness Factor vs. Conduction Current

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

10

12

0

200

400

600

800

1000

di/dt (A/

µµµµs)

Figure 17: Diode Reverse Recovery Time and

Softness Factor vs. di/dt

125ºC

25ºC

125ºC

I

s=20A

t

rr

S

Rev 4: Nov. 2011

www.aosmd.com

Page 5 of 9

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